PolarHV TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFH 26N50P
IXFV 26N50P
IXFV 26N50PS
V DSS =
I D25 =
R DS(on) ≤
t rr ≤
500 V
26 A
230 m ?
200 ns
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
V DSS
T J = 25 ° C to 150 ° C
500
V
V DGR
V GSS
V GSM
I D25
I DM
I AR
E AR
E AS
dv/dt
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuos
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
500
± 30
± 40
26
78
26
40
1.0
10
V
V
V
A
A
A
mJ
J
V/ns
TO-247 (IXFH)
PLUS220 (IXFV)
D (TAB)
T J ≤ 150 ° C, R G = 4 ?
P D
T J
T JM
T stg
T L
T SOLD
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
400
-55 ... +150
150
-55 ... +150
300
260
W
° C
° C
° C
° C
° C
G
D
S
PLUS220SMD (IXFV_S)
D (TAB)
M d
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
F C
Weight
Mounting force (PLUS220)
TO-247
PLUS220 & PLUS220SMD
11..65/2.5..15
6
5
N/lb
g
g
G
G = Gate
S
D = Drain
D (TAB)
S = Source
TAB = Drain
International standard packages
Fast intrinsic diode
Symbol          Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Features
l
l
BV DSS
V GS = 0 V, I D = 250 μ A
500
V
l
Unclamped Inductive Switching (UIS)
rated
V GS(th)
I GSS
V DS = V GS , I D = 4 mA
V GS = ± 30 V DC , V DS = 0
3.0
5.5
± 100
V
nA
l
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
25
250
μ A
μ A
Advantages
l
l
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
230
m ?
l
High power density
? 2006 IXYS All rights reserved
DS99276E(12/05)
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